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31256 8NUBS 82PFR 3K50V10 28512 28512 SMBJ10C 2322168
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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1097
DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SD1588 APPLICATIONS For low frequency power amplifier and low speed switching applications
PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC PARAMETER

HAN INC
Collector -emitter voltage Emitter-base voltage Collector current
Collector-base voltage
SEM GE
Open emitter Open base Open collector
CONDITIONS
OND IC
TOR UC
VALUE -80 -60 -5 -7
UNIT V V V A
Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature
2.0 W 30 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-30mA; IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-1V 40 MIN -60 -80 -5
2SB1097
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE
TYP.
MAX
UNIT V V V
-0.5 -1.5 -10 -10 |I |I
V V A A
hFE Classifications M 40-80 L 60-120 K 100-200

HAN INC
SEM GE
OND IC
TOR UC
200
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1097
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance: A
0.15 mm)
3


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